In its 2025 predictions for GaN power semiconductors, Infineon emphasizes that gallium nitride will revolutionize energy efficiency and decarbonization across various sectors, including consumer electronics, mobility, residential solar, telecommunications, and AI data centers. GaN offers substantial benefits in customer applications, enabling efficient performance, reduced size, lighter weight, and lower overall costs. While USB-C chargers and adapters have led the way, GaN is poised for broader adoption across additional industries, significantly boosting the market for GaN-based power semiconductors.
"Infineon is committed to advancing decarbonization and digitalization through innovation across all semiconductor materials—Si, SiC, and GaN," said Johannes Schoiswohl, Head of the GaN Business Line at Infineon. “The importance of comprehensive power systems will grow as GaN showcases its advantages in efficiency, density, and size. With cost-parity with silicon on the horizon, we anticipate an increased adoption rate for GaN this year and beyond.”
The surge in AI will heavily rely on GaN technology. The escalating demand for computing power and energy in AI data centers necessitates advanced solutions capable of managing the substantial loads associated with AI servers. Power supplies that once handled 3.3 kW are now evolving to accommodate 5.5 kW, with projections aiming for 12 kW or more per unit. By utilizing GaN, AI data centers can enhance power density, directly influencing the computational power deliverable within a given rack space. While GaN offers distinct advantages, hybrid solutions that combine GaN with Si and SiC are optimal for meeting the demands of AI data centers and achieving the best balance between efficiency, power density, and system cost.
In the home appliance sector, Infineon anticipates significant growth for GaN, driven by the increasing need for higher energy efficiency ratings in products such as washing machines, dryers, refrigerators, and water/heat pumps. In 800 W applications, for instance, GaN can facilitate a two percent efficiency improvement, assisting manufacturers in achieving the coveted A ratings. Infineon also notes that GaN-based on-board chargers and DC-DC converters in electric vehicles will enhance charging efficiency, power density, and material sustainability, with a shift towards systems exceeding 20 kW. Alongside high-end SiC solutions, GaN will enable more efficient traction inverters for both 400 V and 800 V electric vehicle systems, contributing to an extended driving range.
Looking ahead to 2025 and beyond, robotics will witness widespread adoption of GaN technology, thanks to its ability to enhance compactness, which will drive growth in delivery drones, care robots, and humanoid robots. As robotics technology integrates AI advancements such as natural language processing and computer vision, GaN will provide the efficiency necessary for compact, high-performance designs. Incorporating inverters within motor chassis will eliminate the need for inverter heatsinks, reduce cabling for each joint/axis, and simplify EMC design.
Infineon is committed to investing in GaN research and development to tackle the challenges of cost and scalability. With the broadest product and IP portfolio, the highest quality standards, and leading-edge innovations like 300 mm GaN wafer manufacturing and bidirectional switch (BDS) transistors, the company is reinforcing its leadership role in driving decarbonization and digitalization through all relevant semiconductor materials, including gallium nitride.